| PART |
Description |
Maker |
| GT15Q311 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
|
TOSHIBA[Toshiba Semiconductor]
|
| BUK866-400IZ |
Insulated Gate Bipolar Transistor Protected Logic-Level IGBT(带逻辑电平保护的绝缘栅双极型晶体管IGBT
Insulated Gate Bipolar Transistor Protected Logic-Level IGBT(带逻辑电平保护的绝缘栅双极型晶体管（IGBT
|
NXP Semiconductors N.V.
Philips Semiconductors
|
| IRG7PH35U-EP IRG7PH35UPBF IRG7PH35UPBF-15 |
55 A, 1200 V, N-CHANNEL IGBT, TO-247AD
INSULATED GATE BIPOLAR TRANSISTOR
INSULATED GATE BIPOLAR TRANSISTOR
|
International Rectifier
|
| IRG4BC30S-S IRG4BC30SS IRG4BC30S-STRL IRG4BC30S-ST |
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 18A I(C) | TO-263AB 晶体管| IGBT的|正陈| 600V的五（巴西）国际消费电子展| 18A条一（c）|63AB
INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT(Vces=600V, Vce(on)typ.=1.4V, @Vge=15V, Ic=18A) 绝缘栅双极晶体管IGBT的标准速度（VCES和\u003d 600V电压的Vce（on）典\u003d.4V，@和VGE \u003d 15V的，集成电路\u003d 18A条）
INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT(Vces=600V Vce(on)typ.=1.4V @Vge=15V Ic=18A)
600V DC-1 kHz (Standard) Discrete IGBT in a D2-Pak package
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| FGD3N60LSDF085 |
Insulated Gate Bipolar Transistor (IGBT)
|
Fairchild Semiconductor
|
| NGTB50N60FWG |
Insulated Gate Bipolar Transistor (IGBT)
|
ON Semiconductor
|
| IRGPC50KD2 IRGPC50KD2-EPBF |
52 A, 600 V, N-CHANNEL IGBT, TO-247AD
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
600V Copack IGBT in a TO-3P (TO-247AC) package
|
International Rectifier
|
| GB75DA120UP |
Insulated Gate Bipolar Transistor (Ultrafast IGBT), 75 A
|
Vishay Siliconix
|
| IRG4MC30F |
Fast Speed IGBT - INSULATED GATE BIPOLAR TRANSISTOR
|
International Rectifier
|
| IRG4BC40SPBF |
INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT
|
IRF[International Rectifier]
|
